Maximize GaN's Advantages with Texas Instruments and KEMET Electronics

GaN possess bandgaps of 3.4 electronvolts (eV) respectively, while Si has a bandgap of 1.1eV. When you take into account the increase in transistor and IC performance combined with lower cost, GaN provides power design engineers several advantages:

• Lower on resistance giving lower conductance losses
• Faster devices yielding reduced switching losses
• Less capacitance resulting in less losses when charging & discharging devices

• Less power needed to drive the circuit
• Smaller devices taking up less space on the PCB
• Designed to operate in elevated temperatures & voltages

Texas Instruments' LMG5200 80V GaN half-bridge power stage provides an integrated power stage solution featuring 15mΩ GaN FETs and driver. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in an half-bridge configuration. Additionally, TI's LMG3410R070 600V GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

It is also critically important to make an intelligent decision with your passive component selection. KEMET Electronics' KC-LINK ceramic capacitors and other passive components answer GaN's challenges of higher capacitance, higher power ratings and elevated temperatures, lower ESR, lower ESL and low-profile designs.